Microsemi
APTGF150DU120TG
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-12
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-12
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTGF150DU120TG technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.7V |
| Input | Standard |
| Input Capacitance | 10.2nF |
| Max Collector Current | 200A |
| Max Power Dissipation | 961W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | Yes |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.