The APTGF180DH60G is a 600V insulated gate bipolar transistor (IGBT) module from Microsemi, designed for high-power applications. It features a maximum collector current of 220A and a maximum power dissipation of 833W. The module is mounted via screws to a chassis and is compliant with RoHS regulations. The IGBT has a collector-emitter breakdown voltage of 600V and a maximum collector-emitter voltage of 2.5V. The input capacitance is 8.6nF, and the package type is a flange mount with a module case.
PackageModule
MountingChassis Mount, Screw
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Technical Specifications
Microsemi APTGF180DH60G technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input | Standard |
| Input Capacitance | 8.6nF |
| Max Collector Current | 220A |
| Max Power Dissipation | 833W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.