Microsemi
APTGF90DA60TG
Insulated Gate Bipolar Transistor, 110A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, MODULE-12
PackageModule
MountingChassis Mount
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Technical Specifications
Microsemi APTGF90DA60TG technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input | Standard |
| Input Capacitance | 4.3nF |
| Max Collector Current | 110A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 416W |
| Mount | Chassis Mount |
| NTC Thermistor | Yes |
| Packaging | Bulk |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTGF90DA60TG Datasheet
Download the complete datasheet for Microsemi APTGF90DA60TG to view detailed technical specifications.
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