Power Field-Effect Transistor, 65A I(D), 1000V, 0.156ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP6, 7 PIN
Microsemi APTM100A13SCG technical specifications.
| Package/Case | Module |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 130mR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Number of Elements | 2 |
| Power Dissipation | 1.25kW |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
No datasheet is available for this part.
