Power Field-Effect Transistor, 22A I(D), 1000V, 0.42ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP3, 25 PIN
Microsemi APTM100H35FT3G technical specifications.
| Package/Case | Module |
| Continuous Drain Current (ID) | 22A |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
No datasheet is available for this part.
