The APTM100H45FT3G is a 4-element N-channel MOSFET module with a continuous drain current rating of 18A and a gate to source voltage rating of 30V. It has a power dissipation of 357W and is packaged in a flange mount configuration. The device operates over a temperature range of -40°C to 150°C and is RoHS compliant. The MOSFET module has a fall time of 35ns and a turn-off delay time of 121ns, with a turn-on delay time of 10ns.
Microsemi APTM100H45FT3G technical specifications.
| Package/Case | Module |
| Continuous Drain Current (ID) | 18A |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Number of Elements | 4 |
| Packaging | Bulk |
| Power Dissipation | 357W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 121ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
No datasheet is available for this part.
