Power Field-Effect Transistor, 22A I(D), 1000V, 0.42ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP3, 25 PIN
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Microsemi APTM100VDA35T3G technical specifications.
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 40ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount, Screw |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 420mR |
| RoHS Compliant | Yes |
| Series | POWER MOS 7® |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
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