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Technical Specifications
Microsemi APTM10DDAM09T3G technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 139A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 125ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 9.875nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi APTM10DDAM09T3G Datasheet
Download the complete datasheet for Microsemi APTM10DDAM09T3G to view detailed technical specifications.
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