Power Field-Effect Transistor, 139A I(D), 100V, 0.01ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SP3, 25 PIN
Sign in to ask questions about the Microsemi APTM10DDAM09T3G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi APTM10DDAM09T3G technical specifications.
| Package/Case | Module |
| Continuous Drain Current (ID) | 139A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 125ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 9.875nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount, Screw |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 95ns |
| Turn-On Delay Time | 35ns |
| RoHS | Compliant |
Download the complete datasheet for Microsemi APTM10DDAM09T3G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
