The APTM10HM09FTG is a 4 N-Channel MOSFET with a maximum drain to source voltage of 100V and continuous drain current of 139A. It features a maximum Rds On of 10mR and a maximum power dissipation of 390W. The device is packaged in a flange mount package and is RoHS compliant. It operates over a temperature range of -40°C to 150°C.
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Microsemi APTM10HM09FTG technical specifications.
| Continuous Drain Current (ID) | 139A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Type | 4 N-Channel |
| Input Capacitance | 9.875nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 390W |
| Mount | Chassis Mount |
| Packaging | Bulk |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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