The JAN2N6193 is a bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 5A. It is packaged in a TO-39-3 cylindrical package with a through hole mount. The transistor is rated for operation between -65°C and 200°C and has a maximum power dissipation of 1W. It is not RoHS compliant and is part of the military series MIL-PRF-19500/561.
PackageTO-39-3
MountingThrough Hole
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Technical Specifications
Microsemi JAN2N6193 technical specifications.
General
| Package/Case | TO-39-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Contact Plating | Tin, Lead |
| Max Collector Current | 5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/561 |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi JAN2N6193 Datasheet
Download the complete datasheet for Microsemi JAN2N6193 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.