The JAN2N6211 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 225V and a collector base voltage of 275V. It can handle a maximum collector current of 2A and a maximum power dissipation of 3W. The transistor is packaged in a TO-66-2 package and is designed for through hole mounting. It has an operating temperature range of -55°C to 200°C.
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Microsemi JAN2N6211 technical specifications.
| Package/Case | TO-66-2 |
| Collector Base Voltage (VCBO) | 275V |
| Collector Emitter Breakdown Voltage | 225V |
| Collector-emitter Voltage-Max | 1.4V |
| Max Collector Current | 2A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/461 |
| RoHS | Not CompliantNo |
No datasheet is available for this part.
