Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN
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Microsemi JAN2N6782 technical specifications.
| Package/Case | TO-39 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 15W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Rds On Max | 610mR |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/556 |
| RoHS | Not Compliant |
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