Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microsemi JAN2N6798 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi JAN2N6798 technical specifications.
| Package/Case | TO-39 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Rds On Max | 420mR |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/557 |
| RoHS | Not Compliant |
Download the complete datasheet for Microsemi JAN2N6798 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
