Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18
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Microsemi JAN2N6798U technical specifications.
| Package/Case | CLCC |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Rds On Max | 420mR |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/557 |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 30ns |
| RoHS | Not CompliantNo |
