The JANTX2N1486 is a TO-8 packaged NPN transistor with a collector base voltage of 100V, collector emitter voltage of 55V, and a maximum collector current of 3A. It operates over a temperature range of -55°C to 125°C and has a maximum power dissipation of 1.75W. The transistor is available in bulk packaging and is not radiation hardened. It is not RoHS compliant.
PackageTO-8
MountingThrough Hole
PolarityNPN
Power1.75W
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Technical Specifications
Microsemi JANTX2N1486 technical specifications.
General
| Package/Case | TO-8 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Voltage (VCEO) | 55V |
| Emitter Base Voltage (VEBO) | 12V |
| Max Collector Current | 3A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N1486 Datasheet
Download the complete datasheet for Microsemi JANTX2N1486 to view detailed technical specifications.
No datasheet is available for this part.