The JANTX2N2906AL is a NPN bipolar junction transistor with a collector base voltage rating of 60V and a maximum collector current of 600mA. It has a maximum power dissipation of 400mW and operates over a temperature range of -65°C to 200°C. The transistor is packaged in a bulk format and is suitable for use in through hole mounting applications.
MountingThrough Hole
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Technical Specifications
Microsemi JANTX2N2906AL technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N2906AL Datasheet
Download the complete datasheet for Microsemi JANTX2N2906AL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.