The JANTX2N2906AL is a NPN bipolar junction transistor with a collector base voltage rating of 60V and a maximum collector current of 600mA. It has a maximum power dissipation of 400mW and operates over a temperature range of -65°C to 200°C. The transistor is packaged in a bulk format and is suitable for use in through hole mounting applications.
Sign in to ask questions about the Microsemi JANTX2N2906AL datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi JANTX2N2906AL technical specifications.
| Collector Base Voltage (VCBO) | 60V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Microsemi JANTX2N2906AL to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
