PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage and a maximum Collector Current of 600mA. Housed in a TO-18-3 package with 3 pins, designed for through-hole mounting. Maximum power dissipation is 500mW.
PackageTO-18-3
MountingThrough Hole
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Technical Specifications
Microsemi JANTX2N2907A technical specifications.
General
| Package/Case | TO-18-3 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Lead Free | Contains Lead |
| Max Collector Current | 600mA |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/291 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N2907A Datasheet
Download the complete datasheet for Microsemi JANTX2N2907A to view detailed technical specifications.
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