NPN Silicon Bipolar Junction Transistor (BJT) in a TO-18 3-pin package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 80V. Offers a collector-base voltage of 140V and a maximum power dissipation of 500mW. Operates across a temperature range of -65°C to 200°C. Designed for through-hole mounting.
PackageTO-18-3
MountingThrough Hole
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Technical Specifications
Microsemi JANTX2N3700 technical specifications.
General
| Package/Case | TO-18-3 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/391 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N3700 Datasheet
Download the complete datasheet for Microsemi JANTX2N3700 to view detailed technical specifications.
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