The JANTX2N5415 is a PNP transistor with a collector-emitter breakdown voltage of 200V and a maximum collector current of 1A. It has a maximum power dissipation of 750mW and operates over a temperature range of -65°C to 200°C. The device is packaged in a TO-5 cylindrical package and is available in bulk. It is not radiation hardened and is not RoHS compliant.
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Microsemi JANTX2N5415 technical specifications.
| Package/Case | TO-5 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 2V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/485 |
| RoHS | Not CompliantNo |
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