Small Signal Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN
Sign in to ask questions about the Microsemi JANTX2N5416 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi JANTX2N5416 technical specifications.
| Package/Case | TO-5 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 2V |
| Emitter Base Voltage (VEBO) | 6V |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/485 |
| RoHS | Not CompliantNo |
Download the complete datasheet for Microsemi JANTX2N5416 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
