The JANTX2N6341 is a NPN bipolar junction transistor with a collector base voltage of 180V and a collector emitter breakdown voltage of 150V. It can handle a maximum collector current of 25A and a maximum power dissipation of 200W. The transistor is designed to operate within a temperature range of -65°C to 175°C and is available in a TO-204 package. It is not radiation hardened and is not RoHS compliant.
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Microsemi JANTX2N6341 technical specifications.
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector-emitter Voltage-Max | 1.8V |
| Max Collector Current | 25A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/509 |
| RoHS | Not CompliantNo |
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