Microsemi
JANTX2N6989
Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Plastic/Epoxy, 14 Pin, DIP-14
PackageDIP
MountingThrough Hole
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Technical Specifications
Microsemi JANTX2N6989 technical specifications.
General
Package/Case
DIP
Collector Base Voltage (VCBO)
75V
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
1V
Max Breakdown Voltage
50V
Max Collector Current
800mA
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.5W
Mount
Through Hole
Package Quantity
1
Packaging
Bulk
Radiation Hardening
No
RoHS Compliant
No
Series
Military, MIL-PRF-19500/559
Compliance
RoHS
Not CompliantNo
Datasheet
Microsemi JANTX2N6989 Datasheet
Download the complete datasheet for Microsemi JANTX2N6989 to view detailed technical specifications.
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