The JANTX2N6989 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. It is packaged in a DIP-14 package and is designed for through hole mounting. The transistor has a maximum power dissipation of 1.5W and operates over a temperature range of -65°C to 200°C. It is not radiation hardened and is not RoHS compliant.
PackageDIP
MountingThrough Hole
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Microsemi JANTX2N6989 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Microsemi JANTX2N6989 technical specifications.
General
| Package/Case | DIP |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 1V |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 800mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/559 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTX2N6989 Datasheet
Download the complete datasheet for Microsemi JANTX2N6989 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.