Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN
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Microsemi JANTX2N7225 technical specifications.
| Package/Case | TO-254-3 |
| Contact Plating | Tin, Lead |
| Continuous Drain Current (ID) | 27.4A |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Bulk |
| Rds On Max | 105mR |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/592 |
| RoHS | Not Compliant |
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