Microsemi
JANTXV1N5809
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
PackageAxial
MountingThrough Hole
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Technical Specifications
Microsemi JANTXV1N5809 technical specifications.
General
| Average Rectified Current | 3A |
| Package/Case | Axial |
| Forward Current | 6A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Current | 5uA |
| Max Reverse Voltage (DC) | 100V |
| Mount | Through Hole |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 125A |
| Radiation Hardening | No |
| Reverse Recovery Time | 30ns |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/477 |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi JANTXV1N5809 Datasheet
Download the complete datasheet for Microsemi JANTXV1N5809 to view detailed technical specifications.
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