The JANTXV2N3055 is a NPN bipolar junction transistor with a collector-emitter voltage rating of 70V and a maximum collector current of 15A. It is packaged in a TO-3 case and is designed for through-hole mounting. The transistor has a maximum power dissipation of 6W and an operating temperature range of -65°C to 200°C. It is not radiation hardened and is not RoHS compliant.
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Microsemi JANTXV2N3055 technical specifications.
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Voltage (VCEO) | 70V |
| Emitter Base Voltage (VEBO) | 7V |
| Max Collector Current | 15A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 6W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 6W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
Download the complete datasheet for Microsemi JANTXV2N3055 to view detailed technical specifications.
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