Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U-PKG-3
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| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| Rds On Max | 515mR |
| RoHS Compliant | No |
| Series | Military, MIL-PRF-19500/592 |
| RoHS | Not Compliant |
