The MASMBJ20CAE3 is a silicon bidirectional transient voltage suppressor diode with a maximum reverse voltage of 20V and a maximum non-repetitive peak reverse power dissipation of 600W. It has a nominal breakdown voltage of 23.35V and a maximum breakdown voltage of 24.5V. The diode is packaged in a 2-pin DO-214AA package and has a maximum power dissipation of 1.38W. The device is suitable for use in applications where transient voltage suppression is required.
Sign in to ask questions about the Microsemi MASMBJ20CAE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi MASMBJ20CAE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 20 |
| Breakdown Voltage-Min | 22.2 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 32.4 |
| Breakdown Voltage-Nom | 23.35 |
| Breakdown Voltage-Max | 24.5 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | True |
Download the complete datasheet for Microsemi MASMBJ20CAE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.