MMBT2222A is an NPN general-purpose amplifier transistor in a SOT-23 surface-mount package. It has a collector-emitter breakdown voltage of 40 V, collector-base breakdown voltage of 75 V, and emitter-base breakdown voltage of 6.0 V. The device is rated for 350 mW power dissipation and a transition frequency of 300 MHz under the stated test conditions. Small-signal characteristics include 8.0 pF output capacitance, 25 pF input capacitance, and a 4.0 dB noise figure. Typical switching performance includes 10 ns delay time, 25 ns rise time, 225 ns storage time, and 60 ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Microsemi MMBT2222A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi MMBT2222A technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MMBT2222A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.