The MSMBG12AE3 is a unidirectional transient voltage suppressor diode with a maximum reverse voltage of 12V and a minimum breakdown voltage of 13.3V. It has a maximum non-repetitive peak reverse power dissipation of 600mW and a maximum clamping voltage of 19.9V. The diode is packaged in a 2-pin DO-215AA package and is suitable for surface mount applications. The operating temperature range is not specified.
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Microsemi MSMBG12AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-215AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12 |
| Breakdown Voltage-Min | 13.3 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 19.9 |
| Breakdown Voltage-Nom | 14 |
| Breakdown Voltage-Max | 14.7 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
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