The MSMBG40AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 40V and a minimum breakdown voltage of 44.4V. It has a maximum non-repetitive peak reverse power dissipation of 600W and a maximum clamping voltage of 64.5V. The diode is packaged in a 2-pin DO-215AA package and is suitable for use in a variety of applications including overvoltage protection and voltage clamping. The MSMBG40AE3 is manufactured by Microsemi and meets the requirements of the DO-215AA package code.
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Microsemi MSMBG40AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-215AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 40 |
| Breakdown Voltage-Min | 44.4 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 64.5 |
| Breakdown Voltage-Nom | 46.75 |
| Breakdown Voltage-Max | 49.1 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
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