The MSMBG6.0AE3/TR is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 6.67V and a minimum breakdown voltage of 6.67V. It has a maximum non-repetitive peak reverse power dissipation of 600mW and a maximum clamping voltage of 10.3V. The diode is packaged in a DO-215AA package type, which is a small, surface-mountable package. The operating temperature range is not specified, but the device is suitable for use in a variety of applications requiring transient voltage suppression. The diode is manufactured by Microsemi.
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Microsemi MSMBG6.0AE3/TR technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-215AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 6 |
| Breakdown Voltage-Min | 6.67 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 10.3 |
| Breakdown Voltage-Nom | 7.02 |
| Breakdown Voltage-Max | 7.37 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MSMBG6.0AE3/TR to view detailed technical specifications.
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