This silicon bidirectional transient voltage suppressor diode features a maximum reverse voltage of 100V and a maximum non-repetitive peak reverse power dissipation of 600W. The diode is packaged in a 2-pin DO-214AA package and has a maximum power dissipation of 1.38W. The operating temperature range is not specified.
Sign in to ask questions about the Microsemi MSMBJ100CAE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi MSMBJ100CAE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Breakdown Voltage-Min | 111 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Breakdown Voltage-Max | 123 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MSMBJ100CAE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
