The Microsemi MSMBJ15AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 15V and a maximum non-repetitive peak reverse power dissipation of 600mW. It features a DO-214AA package with 2 terminals and is suitable for transient voltage suppression applications. The diode has a maximum breakdown voltage of 18.5V and a maximum power dissipation of 1.38W. The operating temperature range is not specified.
Microsemi MSMBJ15AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 15 |
| Breakdown Voltage-Min | 16.7 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Breakdown Voltage-Max | 18.5 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MSMBJ15AE3 to view detailed technical specifications.
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