The MSMBJ33AE3/TR is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 33V and a maximum non-repetitive peak reverse power dissipation of 600W. It features a breakdown voltage of 38.65V and a clamping voltage of 53.3V. The diode is packaged in a DO-214AA package type and is suitable for transient voltage suppression applications.
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Microsemi MSMBJ33AE3/TR technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 33 |
| Breakdown Voltage-Min | 36.7 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 53.3 |
| Breakdown Voltage-Nom | 38.65 |
| Breakdown Voltage-Max | 40.6 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
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