This unidirectional silicon transient voltage suppressor diode features a breakdown voltage of 14.4V and a maximum non-repetitive peak reverse power dissipation of 1500mW. It is packaged in a 2-pin DO-215AB plastic package, compliant with ROHS standards. The diode is suitable for transient voltage suppression applications, with a maximum clamping voltage of 21.5V and a maximum power dissipation of 5W.
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Microsemi MSMCGLCE13AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-215AB |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 13 |
| Breakdown Voltage-Min | 14.4 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Clamping Voltage-Max | 21.5 |
| Breakdown Voltage-Nom | 15.15 |
| Breakdown Voltage-Max | 15.9 |
| Power Dissipation-Max | 5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
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