The MSMCJ150CAE3 is a bidirectional transient voltage suppressor diode with a maximum reverse voltage of 150V and a maximum power dissipation of 1.56W. It features a silicon diode element and a DO-214AB package. The diode is suitable for use in applications where voltage suppression is required, and it can withstand a maximum non-repetitive peak reverse power dissipation of 1500W. The device is available in a 2-pin package and has a maximum breakdown voltage of 185V.
Sign in to ask questions about the Microsemi MSMCJ150CAE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi MSMCJ150CAE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AB |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 150 |
| Breakdown Voltage-Min | 167 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 185 |
| Power Dissipation-Max | 1.56 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Download the complete datasheet for Microsemi MSMCJ150CAE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
