The MSMCJ43CAE3 is a bidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 43V and a maximum non-repetitive peak reverse power dissipation of 1500W. It features a DO-214AB package with 2 terminals and is suitable for use in a variety of applications. The diode has a maximum power dissipation of 1.56W and is constructed from silicon material. The MSMCJ43CAE3 is designed to protect electronic circuits from voltage spikes and transient events.
Sign in to ask questions about the Microsemi MSMCJ43CAE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi MSMCJ43CAE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AB |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 43 |
| Breakdown Voltage-Min | 47.8 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 52.8 |
| Power Dissipation-Max | 1.56 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Download the complete datasheet for Microsemi MSMCJ43CAE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
