This unidirectional silicon transient voltage suppressor diode features a maximum reverse voltage of 10.2V and a minimum breakdown voltage of 11.4V. The device has a maximum non-repetitive peak reverse power dissipation of 400W and a maximum power dissipation of 2.5W. It is packaged in a DO-204AL axial package with a terminal position of axial.
Sign in to ask questions about the Microsemi MXLP4KE12AE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi MXLP4KE12AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-204AL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 10.2 |
| Breakdown Voltage-Min | 11.4 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Clamping Voltage-Max | 16.7 |
| Breakdown Voltage-Nom | 12 |
| Breakdown Voltage-Max | 12.6 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MXLP4KE12AE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.