The MXLP4KE33AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 28.2V and a maximum non-repetitive peak reverse power dissipation of 400W. It has a nominal breakdown voltage of 33V and a maximum breakdown voltage of 34.7V. The diode is packaged in a DO-204AL axial package and has a maximum power dissipation of 2.5W. It is suitable for use in applications where transient voltage suppression is required.
Sign in to ask questions about the Microsemi MXLP4KE33AE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi MXLP4KE33AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-204AL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 28.2 |
| Breakdown Voltage-Min | 31.4 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Clamping Voltage-Max | 45.7 |
| Breakdown Voltage-Nom | 33 |
| Breakdown Voltage-Max | 34.7 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Microsemi MXLP4KE33AE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.