The MXLP4KE33AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 28.2V and a maximum non-repetitive peak reverse power dissipation of 400W. It has a nominal breakdown voltage of 33V and a maximum breakdown voltage of 34.7V. The diode is packaged in a DO-204AL axial package and has a maximum power dissipation of 2.5W. It is suitable for use in applications where transient voltage suppression is required.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MXLP4KE33AE3 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-204AL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 28.2 |
| Breakdown Voltage-Min | 31.4 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Clamping Voltage-Max | 45.7 |
| Breakdown Voltage-Nom | 33 |
| Breakdown Voltage-Max | 34.7 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Microsemi MXLP4KE33AE3 Datasheet
Download the complete datasheet for Microsemi MXLP4KE33AE3 to view detailed technical specifications.
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