This silicon transient voltage suppressor diode features a unidirectional polarity and a maximum reverse voltage of 300V. The device has a nominal breakdown voltage of 350V and a maximum breakdown voltage of 368V. It can handle a maximum non-repetitive peak reverse power dissipation of 400W and a maximum clamping voltage of 482V. The diode is packaged in a DO-204AL axial format with a maximum power dissipation of 2.5W.
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Microsemi MXLP4KE350AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-204AL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 300 |
| Breakdown Voltage-Min | 333 |
| Non-rep Peak Rev Power Dis-Max | 400 |
| Clamping Voltage-Max | 482 |
| Breakdown Voltage-Nom | 350 |
| Breakdown Voltage-Max | 368 |
| Power Dissipation-Max | 2.5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
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