This unidirectional silicon transient voltage suppressor diode features a maximum reverse voltage of 45V, minimum breakdown voltage of 50V, and maximum non-repetitive peak reverse power dissipation of 15kW. The clamping voltage is maximally 72.7V, with a nominal breakdown voltage of 52.65V and a maximum breakdown voltage of 55.3V. The device has a maximum power dissipation of 2.5W and is packaged in a R-PSSO-G1 type.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi MXLPLAD15KP45AE3 technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 45 |
| Breakdown Voltage-Min | 50 |
| Non-rep Peak Rev Power Dis-Max | 15000 |
| Clamping Voltage-Max | 72.7 |
| Breakdown Voltage-Nom | 52.65 |
| Breakdown Voltage-Max | 55.3 |
| Power Dissipation-Max | 2.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Microsemi MXLPLAD15KP45AE3 Datasheet
Download the complete datasheet for Microsemi MXLPLAD15KP45AE3 to view detailed technical specifications.
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