This silicon transient voltage suppressor diode features a maximum reverse voltage of 100V and a maximum non-repetitive peak reverse power dissipation of 30000W. The device has a breakdown voltage of 117V and a maximum clamping voltage of 162V. It is available in a 1-pin package type R-PSSO-G1.
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Microsemi MXLPLAD30KP100A technical specifications.
| Number of Terminals | 1 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Breakdown Voltage-Min | 111 |
| Non-rep Peak Rev Power Dis-Max | 30000 |
| Clamping Voltage-Max | 162 |
| Breakdown Voltage-Nom | 117 |
| Breakdown Voltage-Max | 123 |
| Power Dissipation-Max | 2.5 |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
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