The MXLSMBG12AE3 is a unidirectional transient voltage suppressor diode with a maximum reverse voltage of 12V and a nominal breakdown voltage of 14V. It has a maximum power dissipation of 1.38W and is packaged in a DO-215AA package. The diode is made of silicon and has a maximum non-repetitive peak reverse power dissipation of 600W. It is suitable for use in applications where transient voltage suppression is required.
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Microsemi MXLSMBG12AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-215AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12 |
| Breakdown Voltage-Min | 13.3 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 19.9 |
| Breakdown Voltage-Nom | 14 |
| Breakdown Voltage-Max | 14.7 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
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