The MXLSMBJ100AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 100V and a maximum non-repetitive peak reverse power dissipation of 600mW. It has a JEDEC package code of DO-214AA and a 2-pin configuration. The device is suitable for use in applications where high voltage suppression is required. The operating temperature range is not specified in the provided data. The MXLSMBJ100AE3 is manufactured by Microsemi and meets the requirements of the provided categories.
Microsemi MXLSMBJ100AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Breakdown Voltage-Min | 111 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Breakdown Voltage-Max | 123 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.
