This silicon transient voltage suppressor diode features a maximum reverse voltage of 33V and a maximum non-repetitive peak reverse power dissipation of 600W. It has a breakdown voltage of 38.65V and a maximum clamping voltage of 53.3V. The diode is packaged in a 2-pin DO-214AA package and is suitable for use in a variety of applications. The operating temperature range is not specified, but the device is likely suitable for use in a wide range of temperatures. The manufacturer is Microsemi, and the part number is MXLSMBJ33AE3.
Microsemi MXLSMBJ33AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 33 |
| Breakdown Voltage-Min | 36.7 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 53.3 |
| Breakdown Voltage-Nom | 38.65 |
| Breakdown Voltage-Max | 40.6 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.
