The MXLSMBJ43AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage rating of 43V and a maximum non-repetitive peak reverse power dissipation of 600mW. It has a nominal breakdown voltage of 50.3V and a maximum breakdown voltage of 52.8V. The diode is packaged in a 2-pin DO-214AA package and has a maximum power dissipation of 1.38W. It is suitable for use in applications where transient voltage suppression is required.
Microsemi MXLSMBJ43AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 43 |
| Breakdown Voltage-Min | 47.8 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 69.4 |
| Breakdown Voltage-Nom | 50.3 |
| Breakdown Voltage-Max | 52.8 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.
