The MXSMBG12AE3 is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 12V and a minimum breakdown voltage of 13.3V. It has a maximum non-repetitive peak reverse power dissipation of 600mW and a maximum clamping voltage of 19.9V. The diode is packaged in a 2-pin DO-215AA package and is suitable for use in a variety of applications. The operating temperature range is not specified in the provided data. The diode is manufactured by Microsemi and meets the requirements for use in automotive and industrial applications.
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Microsemi MXSMBG12AE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-215AA |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12 |
| Breakdown Voltage-Min | 13.3 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 19.9 |
| Breakdown Voltage-Nom | 14 |
| Breakdown Voltage-Max | 14.7 |
| Power Dissipation-Max | 1.38 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | not_compliant |
| Military Spec | True |
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