This is a 2-element bidirectional silicon transient voltage suppressor diode with a maximum reverse voltage rating of 30V and a maximum breakdown voltage of 36.8V. It has a maximum power dissipation of 1.56W and is packaged in the DO-214AB package. The diode element material is silicon and the diode type is a transient voltage suppressor diode. The device is suitable for use in a variety of applications including surge protection and voltage clamping.
Sign in to ask questions about the Microsemi MXSMCJ30CAE3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Microsemi MXSMCJ30CAE3 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AB |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Breakdown Voltage-Min | 33.3 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Breakdown Voltage-Max | 36.8 |
| Power Dissipation-Max | 1.56 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Download the complete datasheet for Microsemi MXSMCJ30CAE3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
