Unidirectional transient voltage suppressor diode with 600W peak reverse power dissipation. Features a 36V repetitive peak reverse voltage and a minimum breakdown voltage of 40V. Maximum clamping voltage is 58.1V, with a nominal breakdown voltage of 42.1V. Constructed with a single silicon diode element in a DO-214AA plastic package, operating from -65°C to 150°C.
PolarityUNIDIRECTIONAL
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Technical Specifications
Microsemi SMBJ36A technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-65
Terminal Position
DUAL
JEDEC Package Code
DO-214AA
Pin Count
2
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
36
Breakdown Voltage-Min
40
Non-rep Peak Rev Power Dis-Max
600
Clamping Voltage-Max
58.1
Breakdown Voltage-Nom
42.1
Breakdown Voltage-Max
44.2
Power Dissipation-Max
1.38
Compliance
RoHS
No
Eccn Code
EAR99
Lead Free
No
HTS Code
8541.10.00.50
REACH
unknown
Military Spec
False
Datasheet
Microsemi SMBJ36A Datasheet
Download the complete datasheet for Microsemi SMBJ36A to view detailed technical specifications.
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