Datasheets.com
Datasheets.com
Microsemi

TPR1000

RF Power Bipolar Transistor, L Band, Silicon, NPN, 55KV, 4 PIN

Frequency1.09GHz
MountingChassis Mount, Screw
Quick Jump:

Technical Specifications

Microsemi TPR1000 technical specifications.

General

Collector Emitter Breakdown Voltage
65V
Gain
6dB
Max Collector Current
80A
Max Frequency
1.09GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
2.9kW
Mount
Chassis Mount, Screw
Packaging
Bulk
Radiation Hardening
No
RoHS Compliant
No
Transition Frequency
1.09GHz

Compliance

RoHS
Not CompliantNo

Datasheet

Microsemi TPR1000 Datasheet

Download the complete datasheet for Microsemi TPR1000 to view detailed technical specifications.

This datasheet cannot be embedded due to technical restrictions.